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High temperature purification equipment

The equipment is a process in which graphite products, carbon felt or SiC powder are calcined at high temperature and process gas is directed to flow, and impurity elements are discharged from the matrix through physical diffusion and chemical reaction to form low ash content (5ppmw) and metal content is reduced to PPB order of magnitude, thus achieving the requirements of semiconductor crystal growth on graphite quality (or powder raw material).

Product introduction

The equipment is a process in which graphite products, carbon felt or SiC powder are calcined at high temperature and process gas is directed to flow, and impurity elements are discharged from the matrix through physical diffusion and chemical reaction to form low ash content (5ppmw) and metal content is reduced to PPB order of magnitude, thus achieving the requirements of semiconductor crystal growth on graphite quality (or powder raw material).
Technical parameters
Maximum temperature: 2500 ℃ Common working temperature: 2200 ℃
Temperature uniformity: ≤ ± 5 ℃ Instrument temperature control accuracy: ± 1 ℃
Vacuum time: ≤ 120min

 

Effective working space (mm) Maximum temperature (℃)
840-840-660 2200
Φ1380-900 2500
Φ1300-820 2500
Φ1300-1050 2500
Φ1400mm-1050 2500
Φ1400mm-2000 2500

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